Structure and method for latchup suppression

Details Structure and method for latchup suppression Structure and method for latchup suppression

2007-07-12

2010-12-21

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making regenerative-type switching device

C438S424000

Reexamination Certificate

active

07855104

ABSTRACT:
A method and structure for an integrated circuit comprising a substrate of a first polarity, a merged triple well region of a second polarity and a doped region of the second polarity abutting the well region. The doped region is adapted to suppress latch-up in the integrated circuit. The doped region is placed under semiconductor devices of the first polarity and under the well region contact region. Additionally, the structure may further include a deep trench (DT) structure and trench isolation (TI) structure to further improve latchup robustness.

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