Structure and method for index-guided buried heterostructure...

Details Structure and method for index-guided buried heterostructure... Structure and method for index-guided buried heterostructure...

2005-04-05

2005-04-05

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S041000, C438S046000

Reexamination Certificate

active

06875627

ABSTRACT:
An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

REFERENCES:
patent: 4750183 (1988-06-01), Takahashi et al.
patent: 5509024 (1996-04-01), Bour et al.
patent: 5559819 (1996-09-01), Abe et al.
patent: 5583880 (1996-12-01), Sahkuda et al.
patent: 5923690 (1999-07-01), Kume et al.
patent: 6232623 (2001-05-01), Morita
patent: 6287884 (2001-09-01), Jie et al.
patent: 6319742 (2001-11-01), Hayashi et al.
patent: 409139543 (1997-05-01), None
patent: 409186404 (1999-07-01), None

Affiliated with

Also associated with

Rating

Structure and method for index-guided buried heterostructure... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for index-guided buried heterostructure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for index-guided buried heterostructure... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3439625