Structure and method for implementing oxide leakage based...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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C257S347000, C438S149000, C438S479000, C438S517000

Reexamination Certificate

active

11380799

ABSTRACT:
A voltage divider device includes a double gate field effect transistor (FET) having a first gate and a second gate disposed at opposite sides of a body region. An input voltage is coupled between the first and second gates, and an output voltage is taken from at least one of a source of the FET and a drain of the FET, wherein the output voltage represents a divided voltage with respect to the input voltage.

REFERENCES:
patent: 6262469 (2001-07-01), Le et al.
patent: 6518814 (2003-02-01), Majid et al.
patent: 6737912 (2004-05-01), Otsuka
patent: 6921982 (2005-07-01), Joshi et al.
patent: 6989706 (2006-01-01), Sekigawa et al.
patent: 2003/0178681 (2003-09-01), Clark et al.
patent: 2005/0073354 (2005-04-01), Abadeer et al.
patent: 2007/0013413 (2007-01-01), Chiang et al.
Pei et al., “Indepedently Driven DG MOSFETs for Mixed-Signal Circuits: Part I—Quasi-Static and Nonquasi-Static Channel Coupling”, IEEE Transactions on Electron Devices, vol. 51, No. 12, Dec. 2004, pp. 2086-2093.
7.4 FinFET—A Quasi-Planar Double-Gate MOSFET; ISSCC 2001 / Session 7 / Technology Directions: Advanced Technologies / 7/4; 2001 IEEE International Solid-State Circuits Conference; 2001.
L. Chang et al.; “Direct-Tunneling Gate Leakage Current in Double-Gate and Ultrathin Body MOFETs;” IEEE Transactions of Electron Devices, vol. 49, No. 12, Dec. 2002; pp. 2288-2295.

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