Structure and method for III-nitride monolithic power IC

Details Structure and method for III-nitride monolithic power IC Structure and method for III-nitride monolithic power IC

2006-11-14

2006-11-14

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

C257S506000, C257S513000

Reexamination Certificate

active

07135753

ABSTRACT:
III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

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patent: 5536961 (1996-07-01), Nakagawa et al.
patent: 6969893 (2005-11-01), Shibata et al.

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