Semiconductor device manufacturing: process – Voltage variable capacitance device manufacture
Reexamination Certificate
2007-08-07
2007-08-07
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Voltage variable capacitance device manufacture
C438S238000, C438S514000, C438S526000
Reexamination Certificate
active
10707905
ABSTRACT:
A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various dopants at various energy levels. Accordingly, unit-to-unit device variation is reduced because etching, growing, and deposition processes to make the active portion of the varactor are reduced or eliminated. The resulting HA junction has a more uniform thickness, and a more uniform doping profile.
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Coolbaugh Douglas D.
Furkay Stephen S.
Johnson Jeffrey B.
Rassel Robert M.
Sheridan David C.
Canale Anthony J.
Greenblum & Bernstein P.L.C.
Hu Shouxiang
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