Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-05-26
2010-10-05
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S072000, C257S443000
Reexamination Certificate
active
07808063
ABSTRACT:
Imaging devices having reduced fixed pattern noise are disclosed. The fixed pattern noise in the imaging devices is reduced by measuring and adjusting the spectral characteristics of the imager device on a pixel by pixel basis. The fixed pattern noise of the pixel cells are changed by modifying the absorption, reflectance, refractive index, shape, and/or micro structure of the material.
REFERENCES:
patent: 3971065 (1976-07-01), Bayer
patent: 5471515 (1995-11-01), Fossum et al.
patent: 6333205 (2001-12-01), Rhodes
patent: 6376868 (2002-04-01), Rhodes
patent: 6783900 (2004-08-01), Venkataraman
patent: 2003/0211405 (2003-11-01), Venkataraman
Boettiger Ulrich C.
Ladd John
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Nguyen Cuong Q
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