Structure and method for forming contact structures in integrate

Details Structure and method for forming contact structures in integrate Structure and method for forming contact structures in integrate

1992-04-30

1994-07-19

Picard, Leo P.

Electricity: conductors and insulators

Conduits, cables or conductors

Preformed panel circuit arrangement

174264, 174265, 439 81, 439 91, H05K 100

Patent

active

053311167

ABSTRACT:
A structure and method for forming contact structures in integrated circuits. A buffer layer is formed over an underlying conductive element. A first conductive layer is then deposited over the buffer layer and patterned to define a first interconnect layer. While the first interconnect layer is patterned, the buffer layer protects the underlying conductive element from damage. Portions of the buffer layer which are not covered by the first interconnect layer are then removed, and a second conductive layer is deposited over the integrated circuit. The second conductive layer is then anisotropically etched to form conductive sidewall spacers alongside the vertical sidewalls of the first interconnect layer, where at least one of the conductive sidewall spacers makes electrical contact with the underlying conductive element. Therefore, a conductive contact is made between the underlying conductive element and the first interconnect layer through at least one of the conductive sidewall spacers.

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patent: 5073516 (1991-12-01), Moslehi
patent: 5106773 (1992-04-01), Chen et al.

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