Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2007-05-11
2010-06-08
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257SE21158, C438S570000
Reexamination Certificate
active
07732842
ABSTRACT:
A monolithically integrated trench FET and Schottky diode includes a plurality of trenches extending into a FET region and a Schottky region of a semiconductor layer. A trench in the Schottky region includes a dielectric layer lining the trench sidewalls, and a conductive electrode having a top surface that is substantially coplanar with a top surface of the semiconductor layer adjacent the trench. An interconnect layer electrically contacts the semiconductor layer in the Schottky region so as to form a Schottky contact with the semiconductor layer.
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Y.C. Huang et al., “Characterization of SOG (spin on glass) fully etch back process for multilevel interconnection technology,” SPIE vol. 2636, p. 289-298 (1995).
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PCT/US 07/85722 filed Nov. 28, 2007 Int'l. Search Report and Written Opinion of the ISA.
Fairchild Semiconductor Corporation
Potter Roy K
Townsend and Townsend / and Crew LLP
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