Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-05-26
2009-06-30
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257S328000, C257S330000, C257S331000, C438S429000
Reexamination Certificate
active
07553740
ABSTRACT:
A field effect transistor is formed as follows. Openings are formed in a masking layer extending over a surface of a silicon region. A trench is formed in the silicon region through each opening in the masking layer. A layer of silicon is formed along sidewalls and bottom of each trench and along masking layer sidewalls which define each opening. The masking layer is removed to expose surface areas of the silicon region underlying the masking layer and to expose sidewalls of the layer of silicon to thereby form contact openings over the surface of the silicon region. A contact layer is formed to electrically contact the exposed surface areas of the silicon region and the exposed sidewalls of the layer of silicon.
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Madson Gordon K.
Sharp Joelle
Fairchild Semiconductor Corporation
Patton Paul E
Smith Zandra
Townsend and Townsend / and Crew LLP
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