Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2010-07-22
2011-11-01
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S777000, C257S786000, C257SE23020
Reexamination Certificate
active
08049331
ABSTRACT:
A system and method for providing capacitively-coupled signaling in a system-in-package (SiP) device is disclosed. In one embodiment, the system includes a first semiconductor device and an opposing second semiconductor device spaced apart from the first device, a dielectric layer interposed between the first device and the second device, a first conductive pad positioned in the first device, and a second conductive pad positioned in the second device that capacitively communicate signals from the second device to the first device. In another embodiment, a method of forming a SiP device includes forming a first pad on a surface of a first semiconductor device, forming a second pad on a surface of a second semiconductor device, and interposing a dielectric layer between the first semiconductor device and the second semiconductor device that separates the first conductive signal pad and the second conductive signal pad.
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Dorsey & Whitney LLP
Micro)n Technology, Inc.
Smoot Stephen W
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