Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-01-31
2006-01-31
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S079000, C257S080000, C257S084000, C257S081000, C257S082000, C257S442000, C257S041000, C257S042000, C438S003000, C438S004000, C438S005000, C438S045000, C438S046000
Reexamination Certificate
active
06992321
ABSTRACT:
High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.
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Klosowiak Tomasz L.
Tungare Aroon
Erdem Fazli
Flynn Nathan J.
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