Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-11-15
2005-11-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S184000, C257S189000, C385S004000, C385S011000, C385S015000
Reexamination Certificate
active
06965128
ABSTRACT:
High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.
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Barenburg Barbara Foley
Holm Paige M.
Richard Fred V.
Yamamoto Joyce K.
Freescale Semiconductor Inc.
Nelms David
Nguyen Dao H.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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