Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2009-01-30
2010-11-16
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S978000, C257SE43004, C257SE21665
Reexamination Certificate
active
07833806
ABSTRACT:
A method of forming a magnetoelectronic device includes forming a dielectric material (114) surrounding a magnetic bit (112), etching the dielectric material (114) to define an opening (122) over the magnetic bit (112) without exposing the magnetic bit (112), the opening (122) having a sidewall, depositing a blanket layer (132) of cladding material over the dielectric material (118), including over the sidewall, removing by a sputtering process the blanket layer (132) in the bottom of the opening (122) and the dielectric material (124) over the magnetic bit (112), and forming a conductive material (146) within the opening (122) to form a bit line (154). This process reduces errors caused by process irregularities such as edges of the bits (112) protruding and thereby causing defects in the cladding layer (132) formed thereover. A bit line or digit line so formed may optionally be tapered at the ends (182, 184) to prevent magnetic reversal of the bit line magnetic moment that otherwise may occur due to external magnetic fields.
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PCT International Search Report for PCT/US10/21979 mailed Mar. 22, 2010.
Aggarwal Sanjeev
Butcher Brian R.
Ciancio Anthony
Kyler Kelly Wayne
Rizzo Nicholas D.
Coleman W. David
Enad Christine
Everspin Technologies, Inc.
Ingrassia Fisher & Lorenz P.C.
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