Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-10-02
2007-10-02
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S786000
Reexamination Certificate
active
11284981
ABSTRACT:
A structure and method for an improved a bond pad structure. A top wiring layer and a top dielectric (IMD) layer over a semiconductor structure are provided. The buffer dielectric layer is formed over the top wiring layer and the top dielectric (IMD) layer. A buffer opening is formed in the buffer dielectric layer exposing at least of portion of the top wiring layer. A barrier layer is formed over the buffer dielectric layer, and the top wiring layer in the buffer opening. A conductive buffer layer is formed over the barrier layer. The conductive buffer layer is planarized to form a buffer pad in the buffer opening. A passivation layer is formed over the buffer pad and the buffer dielectric layer. A bond pad opening is formed in the passivation layer over at least a portion of the buffer pad. A bond pad support layer is formed over the buffer pad and the buffer dielectric layer. A bond pad layer is formed over the bond pad support layer. The bond pad layer and the bond pad support layer are patterned to form a bond pad and bond pad support.
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Boon Tan Juan
Chao Zhang Bei
Choo Hsia Liang
Cuthbertson Alan
Fan Zhang
Chartered Semiconductor Manufacturing Ltd.
Potter Roy
Stoffel William J.
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