Structure and method for exposing photoresist

Details Structure and method for exposing photoresist Structure and method for exposing photoresist

1995-05-25

1997-05-06

Turner, Archene

Stock material or miscellaneous articles

Composite

Of silicon containing

428698, 428699, H01L 2906

Patent

active

056269676

ABSTRACT:
A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.

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Dijkstra, et al., "Optimization of Anti-Reflection Layers for Deep UV Lithography", SPIE, vol. 1927 Optical/Laser Microlithography VI (1993), pp. 275-286.

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