Structure and method for electrical isolation of...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S098000

Reexamination Certificate

active

10281421

ABSTRACT:
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

REFERENCES:
patent: 4801993 (1989-01-01), ankri et al.
patent: 5243216 (1993-09-01), Noguchi et al.
patent: 5311046 (1994-05-01), mihashi
patent: 5719891 (1998-02-01), Jewell
patent: 5726462 (1998-03-01), Spahn et al.
patent: 5896408 (1999-04-01), Corzine et al.
patent: 5978408 (1999-11-01), thornton
patent: 5985687 (1999-11-01), bowers et al.
patent: 6148016 (2000-11-01), Hegblom et al.
patent: 6359920 (2002-03-01), Jewell et al.
patent: 6403984 (2002-06-01), Kruangam

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Structure and method for electrical isolation of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and method for electrical isolation of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and method for electrical isolation of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3790456

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.