Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1998-01-14
1999-07-27
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257249, 257250, H01L 27148, H01L 29768
Patent
active
059294710
ABSTRACT:
A control structure for stage selection in a CCD sensor includes a well formed in a substrate and a channel formed in the well, the channel defining a channel direction. A bus structure is disposed over the channel and oriented transversely to the channel direction, the bus structure including a plurality of uniformly spaced register element sets. The plurality of uniformly spaced register element sets includes a first register element set and a plurality of remaining register element sets. The first register element set includes a first clock signal conductor and at least one other clock signal conductor. Each set of the plurality of remaining register element sets includes a first clock signal conductor and at least one other clock signal conductor. The control structure further includes a connection structure to couple together the first clock signal conductor of each of the plurality of remaining register element sets while the first clock signal conductor of the first register element set is electrically isolated from the first clock signal conductor of each of the plurality of remaining register element sets. The connection structure further couples each clock signal conductor of the at least one other clock signal conductor of the first register element set to respective clock signal conductors of each set of the plurality of remaining register element sets.
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Ingram Simon G.
Kiik Martin J.
Weale Gareth P.
Dalsa Inc.
Ngo Ngan V.
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