Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Having graded composition
Reexamination Certificate
2007-11-27
2007-11-27
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Having graded composition
C257S192000
Reexamination Certificate
active
10173986
ABSTRACT:
The invention provides semiconductor structure comprising a strained Ge channel layer, and a gate dielectric disposed over the strained Ge channel layer. In one aspect of the invention, a strained Ge channel MOSFET is provided. The strained Ge channel MOSFET includes a relaxed SiGe virtual substrate with a Ge content between 50-95%, and a strained Ge channel formed on the virtual substrate. A gate structure is formed upon the strained Ge channel, whereupon a MOSFET is formed with increased performance over bulk Si. In another embodiment of the invention, a semiconductor structure comprising a relaxed Ge channel layer and a virtual substrate, wherein the relaxed Ge channel layer is disposed above the virtual substrate. In a further aspect of the invention, a relaxed Ge channel MOSFET is provided. The method includes providing a relaxed virtual substrate with a Ge composition of approximately 100% and a relaxed Ge channel formed on the virtual substrate.
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Fitzgerald Eugene A.
Lee Minjoo L.
Leitz Christopher W.
Goodwin & Procter LLP
Massachusetts Institute of Technology
Nadav Ori
LandOfFree
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