Structure and manufacturing process of localized shunt to...

Details Structure and manufacturing process of localized shunt to... Structure and manufacturing process of localized shunt to...

2005-03-01

2005-03-01

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S734000, C257S750000, C257S758000, C257S762000, C257S770000, C257S776000, C438S618000, C438S694000, C438S687000, C438S689000

Reexamination Certificate

active

06861758

ABSTRACT:
A method and structure to reduce electromigration failure of semiconductor interconnects. In various embodiments, the area around a via is selectively doped with metallic dopants. The method and resulting structure reduce electromigration failure without adding unnecessary, performance-degrading resistance.

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