Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-04-25
2008-10-21
Landau, Matthew C. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE31047, C257S049000, C257S079000, C257S296000, C257S298000, C257S059000, C257S414000
Reexamination Certificate
active
07439544
ABSTRACT:
The present invention provides a manufacturing method of an image TFT array, which includes providing a substrate including a thin film transistor region, a storage capacitor region, a pad region, and a common electrode region, forming a photoresist layer on the substrate, and performing a photolithographic and etching process by utilizing a half-tone mask to pattern the photoresist layer to define a position of a through hole on the storage capacitor region and form the photoresist layer of a first thickness on the thin film transistor region and the photoresist layer of a second thickness on the region between the thin film transistor region and the storage capacitor region, wherein the first thickness is greater than the second thickness.
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Hsiao Chian-Chih
Lin Chin-Mao
Yang Kei-Hsiung
HannStar Display Corp.
Hsu Winston
Landau Matthew C.
Yang Minchul
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