Structure and manufacturing method for nitride-based...

Details Structure and manufacturing method for nitride-based... Structure and manufacturing method for nitride-based...

2006-04-25

2006-04-25

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S604000, C438S605000, C438S710000, C438S720000

Reexamination Certificate

active

07033949

ABSTRACT:
A method for manufacturing a GaN-based light-emitting diode (LED) is provided with the following steps of: providing a substrate; forming a GaN semiconductor epitaxy layer on the substrate, the GaN semiconductor epitaxy layer further including an n-type GaN contact layer, a light-emitting layer and a p-type GaN contact layer; forming a digital penetration layer on the p-type GaN contact layer; using a multi-step dry etching method to etch the digital penetration layer, the p-type GaN contact layer, the light-emitting layer to form an n-metal forming area, etching terminating at the light-emitting layer; forming a first ohmic contact electrode on the digital penetration layer for a p-type ohmic contact layer and a second ohmic contact electrode on the n-metal forming area for an n-type ohmic contact layer; and finally, forming pads on both first and second ohmic contact electrodes.

REFERENCES:
patent: 6693352 (2004-02-01), Huang et al.
patent: 2003/0082860 (2003-05-01), Yoshida et al.
patent: 2003/0136957 (2003-07-01), Tsuda et al.

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