Structure and fabrication process for an aluminum alloy junction

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136255, 438 71, 438 72, 438 89, 438 98, H01L 3106, H01L 3118

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056413629

ABSTRACT:
An improved solar cell design and method of fabrication that primarily uses two materials, n-type doped silicon and aluminum to form a p-n alloy junction back contact solar cell. The aluminum alloy junctions are placed on the back (unilluminated) side of the cell, thereby combining the desirable features of aluminum (as a dopant, contact metal and light reflector), with the advantages of a back contact cell. The cell design and method of fabrication includes such features as surface texturing, front and back surface field minority carrier mirrors, surface passivation using oxidation layers, use of Al contacts as light reflectors, intrinsic protection against reverse bias due to contiguous n.sup.+ and p.sup.+ regions, and an improved bus bar contact design suitable for interconnecting cells using a surface mount technology. An improved method of ohmic contact formation uses a self-alignment technique for forming the ohmic contacts.

REFERENCES:
patent: 3112230 (1963-11-01), Rudenberg
patent: 4133698 (1979-01-01), Chiang et al.
patent: 4927770 (1990-05-01), Swanson
S. Chiang et al, IEEE Trans. Electron Der., vol. ED-25, Dec. 1978, pp. 1405-1409.

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