Structure and fabrication of semiconductor device having merged

Details Structure and fabrication of semiconductor device having merged Structure and fabrication of semiconductor device having merged

1996-03-01

1998-09-01

Trinh, Michael

Fishing, trapping, and vermin destroying

437918, 437919, 437904, H01L 2170

Patent

active

058010653

ABSTRACT:
A compact RC semiconductor structure suitable for integrated RC and RCD networks contains a semiconductor body (10), an overlying dielectric layer (14), and a resistive plate (16A) situated over the dielectric layer. The resistive plate constitutes both a resistor and at least part of the upper plate of a capacitor whose lower plate (12) is formed with part of the semiconductor body below the dielectric layer. A capacitive structure which provides high ESD protection is formed with a semiconductor body (10) that contains a heavily doped surface layer (12) whose sheet resistance is no more than 5 ohms/square. The surface layer constitutes the lower plate for a capacitor whose upper plate is formed with a conductive plate (16A) situated on a dielectric layer (14) overlying the semiconductor body.

REFERENCES:
patent: 3402332 (1968-09-01), Thire
patent: 3408543 (1968-10-01), Minoru et al.
patent: 4001869 (1977-01-01), Brown
patent: 4285001 (1981-08-01), Gerzberg et al.
patent: 4581815 (1986-04-01), Cheung et al.
patent: 4753709 (1988-06-01), Welch et al.
patent: 4874714 (1989-10-01), Eklund
patent: 4910161 (1990-03-01), Arimoto
patent: 5108941 (1992-04-01), Paterson et al.
patent: 5182531 (1993-01-01), Fieldler et al.
patent: 5236852 (1993-08-01), Cherniawski et al.
patent: 5356826 (1994-10-01), Natsume
patent: 5514612 (1996-05-01), Rao et al.
VLSI Fabrication Principles, S.K. Ghandhi, 1983 pp. 631-633.

Affiliated with

Also associated with

Rating

Structure and fabrication of semiconductor device having merged does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure and fabrication of semiconductor device having merged , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and fabrication of semiconductor device having merged will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-269712