Structure and fabrication of gated electron-emitting device havi

Details Structure and fabrication of gated electron-emitting device havi Structure and fabrication of gated electron-emitting device havi

1994-06-29

1996-09-03

O'Shea, Sandra L.

Electric lamp and discharge devices

Discharge devices having a thermionic or emissive cathode

313309, 313336, 313351, H01J 102

Patent

active

055526594

ABSTRACT:
An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.

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