Structure and fabrication method for non-planar memory elements

Details Structure and fabrication method for non-planar memory elements Structure and fabrication method for non-planar memory elements

1996-04-23

1998-05-26

Picard, Leo P.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361312, 361313, 3613014, 3613212, 257303, 257310, 257304, 257306, H01G 406

Patent

active

057576122

ABSTRACT:
Structures for memory cell applications, including capacitors for DRAM and ferroelectric memory cells from FRAM, whose method of manufacture consists of depositing a ferroelectric or high-epsilon dielectric material to completely fill a cavity whose geometrical width is the sole determinant of the thickness of the electrically active portion of the ferroelectric or high-epsilon dielectric layer in the final device. In the preferred embodiment, the cavity into which the dielectric is deposited is defined by the gap between the plate and stack electrodes which are deposited and patterned in a through-mask plating step prior to the dielectric deposition.

REFERENCES:
patent: 5389566 (1995-02-01), Lage
patent: 5408130 (1995-04-01), Woo et al.

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