Structurally-stabilized capacitors and method of making of same

Details Structurally-stabilized capacitors and method of making of same Structurally-stabilized capacitors and method of making of same

2004-10-27

2009-02-10

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S171000, C438S190000, C438S210000, C438S329000, C257S739000, C257SE21011, C257SE21012

Reexamination Certificate

active

07488665

ABSTRACT:
Structurally-stable, tall capacitors having unique three-dimensional architectures for semiconductor devices are disclosed. The capacitors include monolithically-fabricated upright microstructures, i.e., those having large height/width (H/W) ratios, which are mechanical reinforcement against shear forces and the like, by a brace layer that transversely extends between lateral sides of at least two of the free-standing microstructures. The brace layer is formed as a microbridge type structure spanning between the upper ends of the two or more microstructures.

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