Structural body and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S618000, C257S620000, C257S622000, C257S628000, C438S476000, C438S479000, C438S763000

Reexamination Certificate

active

07893522

ABSTRACT:
The present invention includes a substrate structural body having a high electrostatic chuck force at a low voltage even when an insulated board is used, and a method for manufacturing the substrate structural body. As the substrate structural body, there is provided a substrate structural body for attaining its fixing by an electrostatic chuck mechanism, comprising at least a first polycrystalline silicon film formed on the back surface of a substrate comprised of an insulating material or its back and side surfaces, wherein a top layer of part of the back surface or the back and side surfaces is of a first silicon insulating film.

REFERENCES:
patent: 5721145 (1998-02-01), Kusakabe et al.
patent: 5877094 (1999-03-01), Egley et al.
patent: 2006/0102975 (2006-05-01), Nakamura et al.
patent: 03083725 (2000-06-01), None
patent: 2006-147788 (2006-06-01), None
patent: 2009-87979 (2009-04-01), None

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