Coherent light generators – Particular active media – Semiconductor
Patent
1995-04-24
1997-04-15
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 48, 372 45, H01S 319
Patent
active
056217480
ABSTRACT:
A method for fabricating a laser diode, comprises the steps of: forming a first stripe structure defined by a plurality of crystallographically distinct surfaces on a surface of a semiconductor substrate; forming an epitaxial layer of InGaAlP on the semiconductor substrate including the first stripe structure by a decomposition of gaseous source materials of In, Ga, Al and P; wherein the InGaAlP layer is doped to the p-type by incorporating Mg while growing the InGaAlP by adding a gaseous source material of Mg into said source materials of In, Ga, Al and P such that the InGaAlP layer is doped to the p-type with a substantially uniform carrier concentration level irrespective of the crystal surfaces forming the stripe structure.
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Anayama Chikashi
Domen Kay
Furuya Akira
Kondo Makoto
Sekiguchi Hiroshi
Bovernick Rodney B.
Dong Yisuu
Fujitsu Limited
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