Oscillators – Molecular or particle resonant type
Patent
1977-12-28
1980-02-26
Davie, James W.
Oscillators
Molecular or particle resonant type
357 18, H01S 319
Patent
active
041908139
ABSTRACT:
A double heterostructure laser having a pair of opposite-conductivity-type, wide bandgap cladding layers separated by a narrower bandgap active region is characterized in that the active region includes a low-loss waveguide layer and contiguous therewith a narrower bandgap active layer in the form of a narrow strip which extends along the longitudinal (resonator) axis of the laser. Suitable lateral current confinement means, such as reversed biased p-n junctions, are provided to constrain pumping current to flow in a narrow channel through the active layer. Lasers of this type exhibit relatively high pulsed power outputs (e.g., 400 mW), linear L-I characteristics, stable fundamental transverse mode and single longitudinal mode oscillation. In another embodiment the surfaces of the waveguide layer adjacent the active layer are provided with distributed feedback gratings. Also described are techniques for shaping the active layer without the introduction of debilitating defects therein, as well as procedures for LPE growth on Al-containing Group III-V compound layers which are exposed to processing in the ambient.
REFERENCES:
patent: 3883821 (1975-05-01), Miller
patent: 3978426 (1976-08-01), Logan et al.
patent: 3978428 (1976-08-01), Burnham et al.
patent: 3984262 (1976-10-01), Burnham et al.
patent: 4045749 (1977-08-01), Burnham et al.
Tsukada, "GaAs-Ga.sub.1-x Al.sub.x As Buried-Heterostructure Injection Laser," J. Appl. Phys., vol. 45, No. 11, Nov. 1974, pp. 4899-4906.
Logan Ralph A.
Tsang Won-Tien
Bell Telephone Laboratories Incorporated
Davie James W.
Urbano Michael J.
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