Stressed semiconductor using carbon and method for producing...

Details Stressed semiconductor using carbon and method for producing... Stressed semiconductor using carbon and method for producing...

2005-02-14

2010-11-30

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257S051000, C257SE21093, C257SE21270, C257SE27055, C257SE29188, C438S105000, C438S931000

Reexamination Certificate

active

07842537

ABSTRACT:
A stressed semiconductor using carbon is provided. At least one carbon layer containing diamond is formed either below a semiconductor layer or above a semiconductor device. The carbon layer induces stress in the semiconductor layer, thereby increasing carrier mobility in the device channel region. The carbon layer may be selectively formed or patterned to localize the induced stress.

REFERENCES:
patent: 4969031 (1990-11-01), Kobayashi et al.
patent: 5561303 (1996-10-01), Schrantz et al.
patent: 5907768 (1999-05-01), Malta et al.
patent: 6271594 (2001-08-01), Matsubara
patent: 6274417 (2001-08-01), Matsubara
patent: 6573172 (2003-06-01), En et al.
patent: 6815310 (2004-11-01), Roberds et al.
patent: 6830813 (2004-12-01), Ravi
patent: 6960790 (2005-11-01), Miyai et al.
patent: 6987028 (2006-01-01), Ravi
patent: 7247534 (2007-07-01), Chidambarrao et al.
patent: 2002/0167007 (2002-11-01), Yamazaki et al.
patent: 2004/0266055 (2004-12-01), Ravi
patent: 2005/0019967 (2005-01-01), Ravi
patent: 2005/0285187 (2005-12-01), Bryant et al.

Affiliated with

Also associated with

Rating

Stressed semiconductor using carbon and method for producing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stressed semiconductor using carbon and method for producing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stressed semiconductor using carbon and method for producing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4230730