Stressed dielectric devices and methods of fabricating same

Details Stressed dielectric devices and methods of fabricating same Stressed dielectric devices and methods of fabricating same

2009-09-30

2010-10-26

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S018000, C257S255000, C257S368000, C257S649000, C257SE29193, C438S791000, C438S778000

Reexamination Certificate

active

07821109

ABSTRACT:
A structure and a method of making the structure. The structure includes a field effect transistor including: a first and a second source/drain formed in a silicon substrate, the first and second source/drains spaced apart and separated by a channel region in the substrate; a gate dielectric on a top surface of the substrate over the channel region; and an electrically conductive gate on a top surface of the gate dielectric; and a dielectric pillar of a first dielectric material over the gate; and a dielectric layer of a second dielectric material over the first and second source/drains, sidewalls of the dielectric pillar in direct physical contact with the dielectric layer, the dielectric pillar having no internal stress or an internal stress different from an internal stress of the dielectric layer.

REFERENCES:
patent: 7002209 (2006-02-01), Chen et al.
patent: 7052946 (2006-05-01), Chen et al.
patent: 7101744 (2006-09-01), Dyer et al.
patent: 7102201 (2006-09-01), Furukawa et al.
patent: 7183613 (2007-02-01), Zhu et al.
patent: 2005/0189589 (2005-09-01), Zhu et al.
patent: 2006/0113641 (2006-06-01), Hohage et al.
Notice of Allowance (Mail Date Jul. 17, 2009) for U.S. Appl. No. 11/679,880, filed Feb. 28, 2007; Confirmation No. 4311.

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