Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-03-21
2006-03-21
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000
Reexamination Certificate
active
07015116
ABSTRACT:
A shallow trench isolation (STI) structure in a semiconductor substrate and a method for forming the same are provided. A trench is formed in a semiconductor substrate. A first dielectric layer is formed on sidewalls of the trench. The first dielectric layer is formed thicker at a top portion of the sidewalls than a bottom portion of the sidewalls and leaving an entrance of the trench open to expose the trench. A second dielectric layer is conformally formed on the first dielectric layer to close the entrance, thus forming a void buried within the trench. Thus, the stress between the trench dielectric layer and the surrounding silicon substrate during thermal cycling can be substantially reduced.
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Foley Gary
Lee Shih-Ked
Lo Guo-Qiang (Patrick)
Schorr Brian
Integrated Device Technology Inc.
Marger & Johnson & McCollom, P.C.
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