Stress relief of a semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Reexamination Certificate

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C438S462000

Reexamination Certificate

active

07960814

ABSTRACT:
A semiconductor device includes a die including an active region, a scribe region, and a perimeter, wherein the scribe region is closer to the perimeter than the active region. In one embodiment, the die further comprises a crack arrest structure formed in the scribe region, and wherein the crack arrest structure includes one of curva-linear shapes and polygonal shapes concentrically oriented around a common center located at or near at least one corner of the die.

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PCT/US2008/068023 International Search Report and Written Opinion mailed Sep. 30, 2008.
U.S. Appl. No. 11/252,409 filed Oct. 18, 2005.

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