Stress reduction in AlGaAs-AlGaAsP multilayer structures

Details Stress reduction in AlGaAs-AlGaAsP multilayer structures Stress reduction in AlGaAs-AlGaAsP multilayer structures

1974-04-25

1976-05-18

Edlow, Martin H.

357 16, 357 61, H01S 3319, H01L 29161, H01L 29205

Patent

active

039582639

ABSTRACT:
The average stress between contiguous layers of Al.sub.x Ga.sub.1.sub.-x As and Al.sub.y Ga.sub.1.sub.-y As (y > x) is reduced by the addition of phosphorus during the growth of the latter layer to produce the quaternary Al.sub.y Ga.sub.1.sub.-y As.sub.1.sub.-z P.sub.z instead of the ternary Al.sub.y Ga.sub.1.sub.-y As. In order to reduce the average stress to less than about 2 .times. 10.sup.8 dynes/cm.sup.2 the amount of phosphorus added should satisfy the condition: ##EQU1## Also described is a double heterostructure junction laser comprising a GaAs or AlGaAs active layer sandwiched between layers of AlGaAsP.

REFERENCES:
patent: 3812516 (1974-05-01), Hayachi
patent: 3838359 (1974-09-01), Hokki
Shih et al., I.B.M. Tech. Discl. Bull., Vol. 11, No. 12, May 1969, p. 1634.
Burnham et al., Appl. Physics Letters, Nov. 15, 1970, Vol. 17, No. 10, pp. 455-456.

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