Stress programming of transistors

Details Stress programming of transistors Stress programming of transistors

2008-03-21

2010-11-23

Nguyen, Ha Tran T (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

07839160

ABSTRACT:
Methods for stressing transistors in order to program the transistors and for determining whether such transistors have indeed been programmed are described herein. The novel methods may include initially stressing a transistor by applying to the transistor a voltage greater than operational voltages of the transistor to create defects in the transistor. A current flowing through the transistor may then be measured to determine whether the transistor has been programmed, the measured current indicative of the presence of the defects.

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