Stress or magnetic field sensor with spatially varying bias

Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

06910384

ABSTRACT:
A stress or magnetic field sensor comprising a generally elongate magnetically soft amorphous or nanocrystalline electrically resistive element and biasing means for applying to the element a bias magnetic field of which the component directed along the length of the sensor has an amplitude variation pattern along the element. A periodically varying pattern has the effect of reducing the sensitivity of a stress sensor to external ambient fields (FIG.3shows that with a sawtooth bias field the sensitive portions a of a sensor move to positions b in the presence of an ambient field, but their number remains the same). A ramped bias field enables the position of the sensitive region of the sensor to be controlled, for measuring local stress, or for mapping an external magnetic field. Control of the regions where the sensor is active may include selective conductive coating of portions of its length. Potential uses of the stress sensor include a pressure sensor, embedment in moving parts (using rf communication) such as vehicle tyres, aircraft wings or machine parts, and in structures such as bridges where stray magnetic fields are a problem.

REFERENCES:
patent: 4119911 (1978-10-01), Johnson
patent: 4782705 (1988-11-01), Hoffmann et al.
patent: 4812758 (1989-03-01), Yamashita et al.
patent: 4924711 (1990-05-01), Reilly
patent: 5600239 (1997-02-01), Hathaway et al.
patent: 5650570 (1997-07-01), Goto
patent: 6639402 (2003-10-01), Grimes et al.
patent: 0 989 394 (2000-03-01), None
patent: WO 00/03260 (2000-01-01), None
patent: WO 00/57147 (2000-03-01), None
Gore et al., “Properties of Giant magneto-Impedance Material for a Novel Integrating Magnetic Sensor”,Mat. Res. Symp. Proc.vol. 577, pp. 449-504 (1999).
Cobeno et al., “Magnetoelastic Sensor based on GMI of Amorphous Microwire”,Sensors and ActuatorsA91, pp. 95-98 (2001).
Panina et al. “Magneto-Impedance Effect in Amorphous Wires”,Appl. Phys. Lett.65 pp. 1189-1191 (1994).
International Search Report from the European Patent Office for Application No. PCT/GB02/01298.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Stress or magnetic field sensor with spatially varying bias does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stress or magnetic field sensor with spatially varying bias, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress or magnetic field sensor with spatially varying bias will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3481371

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.