Semiconductor device manufacturing: process – With measuring or testing
Patent
1997-08-27
1999-07-27
Chaudhuri, Olik
Semiconductor device manufacturing: process
With measuring or testing
438 14, 438799, 438927, 438663, 374 5, 374 57, 148DIG3, 148DIG162, 73866, H01L 2144
Patent
active
059305878
ABSTRACT:
A method for accurately and objectively evaluating stress migration effects on long term reliability of integrated circuits. A sample containing a conductive runner is fabricated according to a given fabrication process. The fabricated sample undergoes a heating step at a first temperature for a first time period to induce material interactions at an accelerated rate, followed by cooling the sample to a second temperature and maintaining the second temperature for a time of sufficient duration such that relaxation occurs. Then the sample undergoes a heating process at a third temperature for a time sufficient to nucleate a predetermined number of voids, followed by heating the sample runner at a fourth temperature, less than than the third temperature, to propagate the voids such that a maximum void size is determined. Void distribution is preferably monitored by optical and scanning electron microscopy. By analyzing the void size distribution data for the isothermal void propagation annealing, a measure of the long term reliability is provided.
REFERENCES:
patent: 5001541 (1991-03-01), Virkus et al.
patent: 5019533 (1991-05-01), Cuddihy et al.
patent: 5031456 (1991-07-01), Askwith et al.
patent: 5300307 (1994-04-01), Frear et al.
patent: 5308792 (1994-05-01), Okabayashi et al.
patent: 5407863 (1995-04-01), Katsura et al.
patent: 5448113 (1995-09-01), Suzuki et al.
patent: 5504017 (1996-04-01), Yue et al.
patent: 5532600 (1996-07-01), Hoshino
patent: 5565380 (1996-10-01), Nemoto et al.
Y. Sugano et al., Proceedings of the 26th Reliability Physics Symposium, p. 34, 1988.
Acceleration of Stress-Migration Failure in Aluminum Interconnect, by V. Ryan, S. A. Lytle, N.M. McCurry, D.P. Favreau and S. Chittipeddi, presented at Corrosion and Reliability of Electronic Materials and Devices--2nd International Symposium, Oct. 11-16, 1992; Proceedings--Electrochemical Society PV, 1993; 93-1, p: 11-22.
Chaudhuri Olik
Eaton Kurt
Lucent Technologies
LandOfFree
Stress migration evaluation method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stress migration evaluation method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress migration evaluation method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-891257