Stress measuring method and instrument

Details Stress measuring method and instrument Stress measuring method and instrument

2004-03-05

2009-12-29

Lauchman, L. G (Department: 2877)

Optics: measuring and testing

Material strain analysis

With polarized light

C356S368000, C356S364000

Reexamination Certificate

active

07639348

ABSTRACT:
The stress of a sample semiconductor wafer is detected with high accuracy in the form of an absolute value without rotating the sample or the entire optical system. A laser light R is subjected to photoelastic modulation in a PEM6to generate a birefringence phase difference and then it is passed through first and second quarter wavelength plates and passes through a semiconductor wafer D having residual stress. When it is passed through a test piece, the direction of the stress of the test piece is detected when the angle between the laser light R and a linear polarization light is 0 and 90 degrees. The transmitted electric signal is delivered to an analog/digital converter16, and the signal is inputted to a signal processor thus generating transmission signal data. The signal processor reads out the stored reference signal data and the transmission signal data and calculates a reference birefringence phase difference and the absolute values of the birefringence phase difference.

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