X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Reexamination Certificate
2006-02-21
2006-02-21
Glick, Edward J. (Department: 2882)
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
C378S073000, C073S800000
Reexamination Certificate
active
07003074
ABSTRACT:
A stress of a c-axis-oriented specimen of a tetragonal polycrystal is measured using X-ray diffraction under the assumption of a plane stress state. An X-ray optical system is set in the location of φ=0°, 45° or 90°. An X-ray diffracted at a crystal plane (the direction of the normal thereto is the direction of an angle of ψ) with the Miller indices (hkl) is detected. A diffraction angle θ in a strain state is measured in the vicinity of a Bragg's angle θ0in a non-strain state. Strains ε with respect to a plurality of ψ are calculated from the difference between the measurement values θ and the Bragg's angle θ0. Specific stress calculation formulae are determined with respect to the tetragonal system having the Laue symmetry 4/mmm. The stress is calculated from the slope of the linear line of plotted measurement results.
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Endo Kamihisa
Yokoyama Ryouichi
Frishauf Holtz Goodman & Chick P.C.
Glick Edward J.
Kiknadze Irakli
Rigaku Corporation
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