Stress-induced control of polarization dependent properties...

Optical waveguides – Planar optical waveguide – Thin film optical waveguide

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S029000

Reexamination Certificate

active

10951716

ABSTRACT:
In order to make a photonic device incorporating a waveguide, a waveguide is formed with a predetermined geometry. Birefringence is then controlled by determining the amount of stress induced within the waveguide.

REFERENCES:
patent: 4354736 (1982-10-01), Maklad et al.
patent: 4900112 (1990-02-01), Kawachi et al.
patent: 6580864 (2003-06-01), Temkin et al.
patent: 2001/0024559 (2001-09-01), Kling
patent: 2002/0122651 (2002-09-01), Roberts
patent: 2004/0013337 (2004-01-01), Purchase et al.
patent: 2004/0247243 (2004-12-01), Hida et al.
patent: 2005/0196117 (2005-09-01), Harwood
Dai et al., “Analysis of the birefringence of a silicon-on-insulator rib waveguide”, Feb. 10, 2004, App. Optics, vol. 43, No. 5, 1156-5525.
Polarization Insensitive, Low-Loss, Low-Crosstalk Wavelength Multiplexer Modules—Christoph K. Nadler et al 1077-260X/99 1999 IEEE.
Design of Polarization-insensitive components Using geometrical and stress-induced birefringence in SOI waveguides—D.X. XU—Institute for microstructural Sciences NRC Canada Ottawa Canada.
Stress effects on the performance of optical waveguides—M. Huang—Mechanical and Aerospace Engineering Department and Princeton Materials Institute.
Recent Advance in High-Density and Large-Scale AWG Multi/Demultiplexers With Higher Index-Contrast Silica-Based PLCs—Yoshinori Hibino IEEE Journal of Selected Topics in quantum Electronics, vol. 8, No. 6, Nov./Dec. 2002.
Recent Progress in the Design, Simulation and Fabrication of Small Cross-Section Silicon-on-Insulator VOAs—R.R. Whiteman et al—Bookham Technology Plc, Abingdon, Oxon UK.
Polarization-independent single-mode rib waveguides on silicon-on-insulator for telecommunication wavelengths—L. Vivien et al—Institut d'Electronique Fondamentale—Orsay, Cedex, France Feb. 14, 2002.
Control and Compensation of Birefringence in SOI Waveguides—D.X. Xu et al—Annual Meeting of IEEE Lasers & Electro-Optics Society Tuscon USA Oct. 26, 2003.
Design of Polarization-Insensitive SOI Ring Resonators Using Cladding Stress-Induced Birefringence and MMI Couplers—D.X. Xu et al Institute for Microstructural Sciences, NRC Ottawa, Canada.
Control of SOI Waveguide Polarization Properties for Microphotonic Applications—D.X. Xu et al—Institute for Microstructural Sciences, NRC, Ottawa. Canada.
Eliminating the birefringence in silicon-on-insulator ridge waveguides by use of cladding stress—D.X. Xu et al—Institute for Microstructural Sciences, NRC, Ottawa, Canada.
Birefringence Control Using Stress Engineering in Silicon-pon-Insulator (SOI) Waveguides—Winnie N. Ye et al National Science and Engineering Research Council and the NRC, Ottawa, Canada.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Stress-induced control of polarization dependent properties... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stress-induced control of polarization dependent properties..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress-induced control of polarization dependent properties... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3791381

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.