Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Insulative housing or support
Reexamination Certificate
2011-01-18
2011-01-18
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Insulative housing or support
C438S125000, C438S123000, C438S121000, C438S113000, C438S111000
Reexamination Certificate
active
07871865
ABSTRACT:
Various methods are described where the semiconductor die and the lead frame (or the BGA or LGA substrate) are spaced apart to reduce stress. In one scenario, an air gap is formed between the semiconductor die and the lead frame by depositing a perimeter (made, for example, using polymer) either on the semiconductor die or the lead frame. In another scenario, an anisotropic conducting film (ACF) is formed with an air gap between the semiconductor die and the lead frame (or the BGA or LGA substrate). The air gap relieves stress on the semiconductor die. Further, a lead frame-based isolator package and a BGA (or LGA) isolator package are described. A window-frame ACF-based isolation method for magnetic coupling in a lead-frame package and BGA (or LGA) package is also described.
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Goida Thomas
Sengupta Dipak
Analog Devices Inc.
Green Telly D
Sunstein Kann Murphy & Timbers LLP
Wilczewski Mary
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