Stress-free chemo-mechanical polishing agent for II-VI compound

Details Stress-free chemo-mechanical polishing agent for II-VI compound Stress-free chemo-mechanical polishing agent for II-VI compound

1990-04-10

1992-08-11

Smith, James G.

Abrasive tool making process, material, or composition

With inorganic material

Clay, silica, or silicate

156636, 156645, B24D 302

Patent

active

051375443

ABSTRACT:
In the present invention Stress-Free Chemo-Mechanical Polishing Agent For II-VI Compound Semiconductor Single Crystals And Method Of Polishing, a II-VI compound semiconductor single crystal wafer is polished smooth to within 50 angstroms by using a mixture of water, colloidal silica and bleach including sodium hypochlorite applied under time and pressure control to achieve chemo-mechanical polishing. Many such compound crystals are not susceptible to polishing by prior art methods.

REFERENCES:
patent: 3775201 (1973-11-01), Basi
patent: 4347153 (1982-08-01), Hooper
patent: 4428795 (1984-01-01), Kohl
patent: 4448634 (1984-05-01), Lampert
patent: 4475981 (1984-10-01), Rea
patent: 4645561 (1987-02-01), Rea
patent: 4889586 (1989-12-01), Noguchi

Affiliated with

Also associated with

Rating

Stress-free chemo-mechanical polishing agent for II-VI compound does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Stress-free chemo-mechanical polishing agent for II-VI compound , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress-free chemo-mechanical polishing agent for II-VI compound will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-343787