Optics: measuring and testing – Material strain analysis
Patent
1987-11-23
1989-03-14
Evans, F. L.
Optics: measuring and testing
Material strain analysis
356301, G01B 1116, G01J 344, G01N 2165
Patent
active
048120367
ABSTRACT:
A stress evaluation apparatus for evaluating stress existing in a substance by difference between peak wave numbers of Raman spectra of scattered light comprises a light source for emitting excitation light, an entrance optical system for guiding the excitation light to measuring points of a substance to be evaluated, a scatter optical system for focusing scattered light from the measuring points, a spectroscope for spectro-analyzing the scattered light, a detector for detecting Raman spectra of the spectro-analyzed scattered light, an output controller for changing temperatures of the measuring points and a microcomputer for measuring peak wave numbers of the Raman spectra and statistically processing the same to thereafter obtain a peak wave number at a prescribed reference value. The output controller is adapted to change the temperatures of the measuring points of the substance to be evaluated. A plurality of peak wave numbers are measured by the microcomputer as those varied with temperature change of each measuring point, and the measured values are statistically processed per measuring point. Thereafter the microcomputer decides relation between temperature change of each measuring point and the variation of the peak wave numbers, thereby to obtain the peak wave number at the prescribed reference value.
REFERENCES:
patent: 4643950 (1987-02-01), Oqura et al.
T. Katoda et al., "Character of semiconductors by Laser-Raman Spectroscopy", Univ. of Tokyo, Oct. 3, 1980.
T. R. Hart et al., "Temperature Dependency of Raman Scattered in Silicon", Phys. Review B, Aug. 4, 1969, pp. 638-642.
R. TSU et al., "Temperature Dependency of Silicon Raman Lines", Appl. Phys. Lett., Dec. 1, 1982.
Evans F. L.
Mitsubishi Denki & Kabushiki Kaisha
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