Stress engineering using dual pad nitride with selective SOI...

Details Stress engineering using dual pad nitride with selective SOI... Stress engineering using dual pad nitride with selective SOI...

2007-01-30

2009-06-23

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S347000

Reexamination Certificate

active

07550364

ABSTRACT:
A method for engineering stress in the channels of MOS transistors of different conductivity using highly stressed nitride films in combination with selective semiconductor-on-insulator (SOI) device architecture is described. A method of using compressive and tensile nitride films in the shallow trench isolation (STI) process is described. High values of stress are achieved when the method is applied to a selective SOI architecture.

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ews/6/5/13/1, last printed Apr. 28, 2005.

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