Stress-engineered resistance-change memory device

Details Stress-engineered resistance-change memory device Stress-engineered resistance-change memory device

2009-10-15

2011-11-01

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S030000, C257S043000, C257S538000, C257SE27047

Reexamination Certificate

active

08049305

ABSTRACT:
A resistance-change memory device using stress engineering is described, including a first layer including a first conductive electrode, a second layer above the first layer including a resistive-switching element, a third layer above the second layer including a second conductive electrode, where a first stress is created in the switching element at a first interface between the first layer and the second layer upon heating the memory element, and where a second stress is created in the switching element at a second interface between the second layer and the third layer upon the heating. A stress gradient equal to a difference between the first stress and the second stress has an absolute value greater than 50 MPa, and a reset voltage of the memory element has a polarity relative to a common electrical potential that has a sign opposite the stress gradient when applied to the first conductive electrode.

REFERENCES:
patent: 5771902 (1998-06-01), Lee et al.
patent: 6835949 (2004-12-01), Weiss et al.
patent: 6944052 (2005-09-01), Subramanian et al.
patent: 6965137 (2005-11-01), Kinney et al.
patent: 7038935 (2006-05-01), Rinerson et al.
patent: 7067862 (2006-06-01), Rinerson et al.
patent: 7157783 (2007-01-01), Marsh
patent: 7215001 (2007-05-01), Kajita
patent: 7372065 (2008-05-01), Kozicki et al.
patent: 7420198 (2008-09-01), Baek et al.
patent: 7459786 (2008-12-01), Shimazu et al.
patent: 7495947 (2009-02-01), Scheuerlein et al.
patent: 7551473 (2009-06-01), Lung et al.
patent: 7569459 (2009-08-01), Karg et al.
patent: 7615769 (2009-11-01), Kim
patent: 7643202 (2010-01-01), Sasagawa
patent: 2003/0117158 (2003-06-01), Goldbach et al.
patent: 2004/0043578 (2004-03-01), Marsh
patent: 2006/0073657 (2006-04-01), Herner et al.
patent: 2006/0076549 (2006-04-01), Ufert
patent: 2006/0245243 (2006-11-01), Rinerson et al.
patent: 2006/0250836 (2006-11-01), Herner et al.
patent: 2006/0250837 (2006-11-01), Herner et al.
patent: 2006/0255392 (2006-11-01), Cho et al.
patent: 2007/0008773 (2007-01-01), Scheuerlein
patent: 2007/0008785 (2007-01-01), Scheuerlein
patent: 2007/0023851 (2007-02-01), Hartzell et al.
patent: 2007/0052001 (2007-03-01), Ahn et al.
patent: 2007/0114509 (2007-05-01), Herner
patent: 2007/0132049 (2007-06-01), Stipe
patent: 2007/0164309 (2007-07-01), Kumar et al.
patent: 2007/0164388 (2007-07-01), Kumar et al.
patent: 2007/0228354 (2007-10-01), Scheuerlein
patent: 2007/0236981 (2007-10-01), Herner
patent: 2007/0252193 (2007-11-01), Cho et al.
patent: 2007/0267667 (2007-11-01), Ufert
patent: 2007/0285967 (2007-12-01), Toda et al.
patent: 2007/0295950 (2007-12-01), Cho et al.
patent: 2008/0001172 (2008-01-01), Karg et al.
patent: 2008/0006907 (2008-01-01), Lee et al.
patent: 2008/0011996 (2008-01-01), Bednorz et al.
patent: 2008/0090337 (2008-04-01), Williams
patent: 2008/0164568 (2008-07-01), Lee et al.
patent: 2008/0203377 (2008-08-01), Choi et al.
patent: 2008/0211036 (2008-09-01), Zhao et al.
patent: 2008/0316796 (2008-12-01), Herner
patent: 2009/0003083 (2009-01-01), Meeks et al.
patent: 2009/0026434 (2009-01-01), Malhotra et al.
patent: 2009/0134431 (2009-05-01), Tabata et al.
patent: 2009/0154053 (2009-06-01), Biggs et al.
patent: 2009/0230378 (2009-09-01), Ryoo et al.
patent: 2009/0268508 (2009-10-01), Chen et al.
patent: 2009/0272959 (2009-11-01), Phatak et al.
patent: 2009/0272961 (2009-11-01), Miller et al.
patent: 2009/0272968 (2009-11-01), Kumar et al.
patent: 2010/0193953 (2010-08-01), Amano et al.
patent: 2011/0134505 (2011-06-01), Sasagawa
patent: 2344694 (2000-06-01), None
patent: 10-2000-0048092 (2004-03-01), None
patent: 10-2006-0117023 (2006-11-01), None
patent: 10-2007-0062435 (2007-06-01), None
International Search Report, PCT Application PCT/US2009/042424, Dec. 14, 2009.
Chen et al., HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition, Mater. Res. Soc. Symp. Proc., 2007, vol. 997, Materials Research Society.
Inoue et al., Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogenous/inhomogenous transition of current distribution., Phys. Rev. B 77, 035105 (2008), American Physical Society.
Kim et al., Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films, Applied Physics Letters, Jul. 6, 2007, pp. 012907-1-012907-3, vol. 91, American Institute of Physics.
Lee et al., Low Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide, Japanese Journal of Applied Physics, Apr. 24, 2007, pp. 2175-2179, vol. 46, No. 4B, The Japan Society of Applied Physics.
Lee et al., Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications, Journal of the Electrochemical Society, Dec. 6, 2007, pp. H92-H96, vol. 155 (2), The Electrochemical Society.
Sanchez et al., A mechanism for unipolar resistance switching in oxide nonvolatile memory devices, Dec. 17, 2007, Applied Physics Letters, pp. 252101-1-252101-3, vol. 91, American Institute of Physics.
Yang et al., Memristive switching mechanism for metal/oxide/metal nanodevices, Jun. 15, 2008, Nature Nanotechnology, pp. 429-433, vol. 3, Jul. 2008, Macmillan Publishers Limited.
Smyth, The defect chemistry or metal oxides, Chapters 1-5, 8, 9, and 12, pp. 1-74, 118-161, and 217-237, 2000, Oxford University Press, Inc.
Baek et al., Highly Scalable Non-volatile Resistive Memory using Simple Binary Oxide Driven by Asymmetric Unipolar Voltage Pulses, 2004, IEEE, pp. 23.6.1-23.6.4, IEDM 04-587.
Toriumi et al., Doped HfO2 for Higher-k Dielectrics, 208th ECS Meeting, Abstract #508, 2005, The Electrochemical Society.
Lee et al., HfOx Biploar Resistive Memory with Robust Endurance Using AlCu as Buffer Electrode, Jul. 2009, IEEE Electron Device Letters, vol. 30, No. 7, pp. 703-705, IEEE.
International Search Report, PCT Application PCT/US2009/041582, Dec. 14, 2009.
International Search Report, PCT Application PCT/US2009/041583, Nov. 30, 2009.
Chan et al., Resistive switching effects of HfO2 high-k dielectric, Sep. 25, 2008, Microelectronic Engineering, pp. 2420-2424, vol. 85, Elsevier B.V.
Chen et al., Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity, 2009, IEEE, pp. IEDM09-105-IEDM09-108.
U.S. Appl. No. 12/608,934, filed Oct. 29, 2009.
U.S. Appl. No. 12/610,236, filed Oct. 30, 2009.
U.S. Appl. No. 12/705,474, filed Feb. 12, 2010.

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