Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Warping of semiconductor substrate
Patent
1998-03-03
2000-12-05
Smith, Matthew
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Warping of semiconductor substrate
438464, 438795, H01L 2146, H01L 2142
Patent
active
061566233
ABSTRACT:
A method of improving the physical and/or electrical and/or magnetic properties of a thin film material formed on a substrate, wherein the properties of the thin film material are stress-dependent, by selectively applying force to the substrate during the film formation and/or thereafter during the cooling of the film in the case of a film formed at elevated temperature, to impose through the substrate an applied force condition opposing or enhancing the retention of stress in the product film. The method of the invention has particular utility in the formation of ferroelectric thin films which are grown at temperature above the Curie temperature, and which may be placed in tension during the cooling of the film to provide ferroelectric domains with polarization in the plane of the film.
REFERENCES:
patent: 3856647 (1974-12-01), Blachman
patent: 4874438 (1989-10-01), Oshita et al.
patent: 5012304 (1991-04-01), Kash et al.
patent: 5154810 (1992-10-01), Kamerling et al.
patent: 5874351 (1999-02-01), Hu et al.
patent: 5893760 (1999-04-01), Mikata et al.
patent: 5907770 (1999-05-01), Yamazaki et al.
patent: 6020216 (2000-02-01), Beratan et al.
Haertling, G.H., "PLZT Electrooptic Materials and Applications--A Review", Ferroelectrics, vol. 75, 1987, pp. 25-55.
Maldonado, J., et al., " Strain-Biased Ferroelectric-Photoconductor Image Storage and Display Devices", Proc IEEE, vol. 59, No. 3, 1971, pp. 368-382.
Tuttle, B.A., "Relationships Between Ferroelectric 90.degree. Domain Formation and Electrical Properties of Chemically Prepared Pb(Zr,Ti)O.sub.3 Thin Films", Science and Technology of Electroceramic Thin Films--NATO ASI Series--Series E: Applied Sciences, O. Auciello and R. Waser, Eds., vol. 284, 1985, pp. 117-132.
Tominaga, K., et al., "Preparation of C-Axis-Oriented PLT Thin Films by the Metalorganic Chemical Vapor Deposition Method", Jap. J. of Appl. Phys., vol. 29, No. 10, 1990, pp. L1874-6.
Iijima, K., et al., "Preparation and Properties of Lanthanum Modified PbTiO.sub.3 Thin Films by rf-Magnetron Sputtering", Proc IEEE, International Symposium on Applications of Ferroelectrics, R.K. Pandey, M. Lieu and A. Safari, Eds., 1994, p. 53.
Haertling, G.H., "Electronic Ceramics; Properties, Devices, and Applications", L. Levinson, Ed., 1988, pp. 428-492.
Hodge et al., "Stresses in Thin Film Metallization", IEEE Trans. on Components, Packaging, and Manufacturing Tech.--Part A, vol. 20, No. 2, Jun. 1997, pp. 241-250.
Bilodeau Steven M.
Hendrix Bryan C.
Roeder Jeffrey F.
Advanced Technology & Materials Inc.
Hultquist Steven J.
Malsawma Lex H.
Smith Matthew
Zitzmann Oliver A.M.
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