Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-02-22
2005-02-22
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S012000, C257S014000, C257S099000, C257S414000
Reexamination Certificate
active
06858888
ABSTRACT:
A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.
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Lagally Max G.
Lal Amit
Lee Chung Hoon
Rugheimer Paul Powell
Soward Ida M.
Wisconsin Alumni Research Foundation
Zarabian Amir
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