Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2006-12-21
2008-12-16
Zweizig, Jeffrey S (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
Reexamination Certificate
active
07466188
ABSTRACT:
A voltage pump circuit that has an oxide stress control mechanism is disclosed. In particular, the oxide stress control mechanism of the voltage pump circuit ensures a safe transistor gate-to-source voltage in high-voltage applications in an integrated circuit. In particular, the down level of the gate voltage of the output transistor may be conditionally limited. For example, an offset in the down level of the gate voltage is created by conditionally developing an offset voltage in the lower rail voltage of the gate driver. The offset voltage is created by directing a predetermined current through a resistance. The current is conditional such that the current is about zero when the power supply voltage is less than or equal to a predetermined level, and the current is greater than zero when the power supply voltage is greater than a predetermined level.
REFERENCES:
patent: 4616303 (1986-10-01), Mauthe
patent: 5521546 (1996-05-01), Kim
patent: 6072358 (2000-06-01), Hung et al.
patent: 6236581 (2001-05-01), Foss et al.
patent: 6316985 (2001-11-01), Kobayashi et al.
patent: 6466079 (2002-10-01), Kushnarenko
patent: 6762640 (2004-07-01), Katsuhisa
patent: 6828849 (2004-12-01), Nakamura
patent: 7034601 (2006-04-01), Carmina et al.
patent: 7046076 (2006-05-01), Daga et al.
patent: 7323927 (2008-01-01), Menke
Ming-Dou Ker, Shih-Lun Chen, Chia-Shen Tsai; “Design of Charge Pump Circuit with Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Processes,” IEEE Journal of Solid-State Circuits, vol. 41, No. 5, May 2006, pp. 1100-1107.
Ming-Dou Ker, Shih-Lun Chen, Chia-Shen Tsai; “A New Charge Pump Circuit Dealing with Gate-Oxide Reliability Issue in Low-Voltage Processes,” IEEE Journal of Solid-State Circuits, ISCAS 2004, pp. 1-321-1-324.
Tawfique Hasan, Torsten Lehmann, Chee Yee Kwok, “A 5V Charge Pump in a Standard 1.8-V 0.18-um CMOS Process,” IEEE, 2005, pp. 1899-1902.
Kyeong-Sik Min, Young-Hee Kim, Jin-Hong Ahn, Jin-Yong Chung, and Takayasu Sakurai, “CMOS Charge Pumps Using Cross-Coupled Charge Transfer Switches with Improved Voltage Pumping Gain and Low Gate-Oxide Stress for Low-Voltage Memory Circuits,” IEEE, 2002, pp. V-545-V548.
Feng Su, Wing-Hun Ki and Chi-Ying Tsui, “Gate Control Strategies for High Efficiency Charge Pumps,” IEEE, 2005, pp. 1907-1910.
Downs Rachlin & Martin PLLC
International Business Machines - Corporation
Zweizig Jeffrey S
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