Stress compensation type semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 44, H01S3/19

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active

059035870

ABSTRACT:
A stress compensation type semiconductor laser emitting laser light of 0.98 .mu.m.about.1.02 .mu.m wavelength includes a semiconductor substrate, a cladding layer disposed on the semiconductor substrate, and a multiple quantum well structure active layer disposed on the cladding layer and comprising a plurality of well layers and barrier layers. In the laser, when the number, strain, and thickness of the well layers are n, f.sub.w, and t.sub.w, respectively, and the number, strain, and thickness of the barrier layers are m, f.sub.b, and t.sub.b, respectively, the average strain f.sub.av of the well layers and the barrier layers, and the total thickness t.sub.total of the well layers and the barrier layers is given by ##EQU1## where .upsilon. is the Poisson ratio, b.sub.o is the magnitude of a Burgers vector of a perfect dislocation, b.sub.p is the magnitude of a Burgers vector of partial dislocation, and r.sub.c is the half loop radius of a dislocation. Therefore, an active layer having required stress compensation performance is realized with high reliability and high reproducibility.

REFERENCES:
patent: 5673283 (1997-09-01), Kajikawa et al.
Maree et al, "Generation of Misfit Dislocations in Semiconductors", Journal of Applied Physics, vol. 62, No. 11, pp. 4413-4420, Dec. 1, 1987.
Zhang et al., "Strain-Compensated InGaAs/GaAsP/GaInAsP/GaInP Quantum Well Lasers .lambda.-0.98.mu.m) Grown By Gas-Source Molecular Beam Epitaxy", Applied Physics Letters, vol. 62, No. 14, Apr. 1993, pp. 1644-1646.

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