Stray magnetic shielding for a non-volatile MRAM

Details Stray magnetic shielding for a non-volatile MRAM Stray magnetic shielding for a non-volatile MRAM

1997-02-25

1999-05-11

Pianalto, Bernard

Stock material or miscellaneous articles

Composite

Of inorganic material

427131, 427132, 428694TM, 428694TP, B32B9/00

Patent

active

059026901

ABSTRACT:
A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.

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